Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers

Type:
Journal
Info:
J. Phys. D: Appl. Phys. 47 455304 2014
Date:
2014-09-29

Author Information

Name Institution
Ying XiongUniversity of Electronic Science and Technology of China
Qi-Ye WenUniversity of Electronic Science and Technology of China
Zhi ChenUniversity of Electronic Science and Technology of China
Wei TianUniversity of Electronic Science and Technology of China
Tian-Long WenUniversity of Electronic Science and Technology of China
Yu-Lan JingUniversity of Electronic Science and Technology of China
Qing-Hui YangUniversity of Electronic Science and Technology of China
Huai-Wu ZhangUniversity of Electronic Science and Technology of China

Films

Plasma Al2O3


Film/Plasma Properties

Substrates

Si(100)

Notes

PEALD Al2O3 as buffer layer for VO2 sputter deposition.
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