Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma

Type:
Journal
Info:
J. Am. Ceram. Soc., 1-8 (2014)
Date:
2014-08-06

Author Information

Name Institution
Ali HaiderBilkent University
Çağla ÖzgitBilkent University
Eda GoldenbergBilkent University
Ali Kemal OkyayBilkent University
Necmi BiyikliBilkent University

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Transmittance
Analysis: Optical Transmission

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Elemental Mapping
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Substrates

Silicon
Quartz

Notes

Substrates cleaned with 2-propanol, acetone, methanol, and DI-water.
Si substrates received HF dip, DI-water rinse, and N2 dry.
Meaglow Ltd hollow cathode RF-plasma source was used.
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