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Nitride passivation of the interface between high-k dielectrics and SiGe
Type:
Journal
Info:
Applied Physics Letters 108, 011604 (2016)
Date:
2015-12-21
Author Information
| Name | Institution |
|---|---|
| Kasra Sardashti | University of California - San Diego |
| Kai-Ting Hu | University of California - San Diego |
| Kechao Tang | Stanford University |
| Shailesh Madisetti | SUNY Polytechnic Institute |
| Paul C. McIntyre | Stanford University |
| Serge Oktyabrsky | SUNY Polytechnic Institute |
| Shariq Siddiqui | Global Foundries |
| Bhagawan Sahu | Global Foundries |
| Naomi Yoshida | Applied Materials |
| Jessica Kachian | Applied Materials |
| Lin Dong | Applied Materials |
| Bernd Fruhberger | University of California - San Diego |
| Andrew C. Kummel | University of California - San Diego |
Films
Other Al2O3
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transistor Characteristics
Analysis: I-V, Current-Voltage Measurements
Substrates
| SiGe |
Notes
| 457 |