Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
Type:
Journal
Info:
Japanese Journal of Applied Physics 55, 05FH01 (2016)
Date:
2015-10-14
Author Information
Name | Institution |
---|---|
Jie-Jie Zhu | Xidian University |
Xiao-Hua Ma | Xidian University |
Wei-Wei Chen | Xidian University |
Bin Hou | Xidian University |
Yong Xie | Xidian University |
Yue Hao | Xidian University |
Films
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
GaN |
Notes
426 |