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Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 031502 (2015)
Date:
2015-03-02
Author Information
| Name | Institution |
|---|---|
| Triratna Muneshwar | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
Films
Plasma ZrN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Fermi Level Electronic Structure
Analysis: valence band XPS
Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance
Characteristic: TCR, Temperature Coefficient of Resistivity
Analysis: -
Substrates
| Si(111) |
| SiO2 |
Notes
| Kurt J. Lesker ALD150LX PEALD of ZrN study. |
| 340 |