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The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
Type:
Journal
Info:
Acta Physica Polonica A, vol.120, no.6A, 2011.
Date:
2011-09-19
Author Information
| Name | Institution |
|---|---|
| Mustafa Alevli | Bilkent University |
| Çağla Özgit | Bilkent University |
| İnci Dönmez | Bilkent University |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Absorption Edges
Analysis: Optical Transmission
Substrates
| Si(100) |
| SiO2 |
Notes
| Ultratech Fiji PEALD AlN film study. |
| 167 |