The publication database currently has 1700 entries.
Use Advanced Search for more complex searches
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
Type:
Journal
Info:
Applied Physics Letters 97, 152106 (2010)
Date:
2010-09-14
Author Information
| Name | Institution |
|---|---|
| Gijs Dingemans | Eindhoven University of Technology |
| W. Beyer | Forschungszentrum Jülich |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Film/Plasma Properties
Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Thermal Stability
Analysis: Thermal Effusion
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Substrates
| SiO2 |
Notes
| Paper available as chapter 6 in on-line thesis. |
| 685 |