SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
Type:
Conference Proceedings
Info:
43rd International Symposium on Compound Semiconductors (ISCS)
Date:
2016-06-26
Author Information
Name | Institution |
---|---|
Takayuki Suzuki | Toyota Technological Institute |
Tomiaki Yamada | Toyota Technological Institute |
Ryosuke Kawai | Toyota Technological Institute |
Shohei Kawaguchi | Toyota Technological Institute |
Dongyan Zhang | Toyota Technological Institute |
Naotaka Iwata | Toyota Technological Institute |
Films
Film/Plasma Properties
Substrates
GaN |
Notes
969 |