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Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
Type:
Journal
Info:
physica status solidi (c) Volume 12, Issue 7, pages 980-984, July 2015
Date:
2015-06-05
Author Information
| Name | Institution |
|---|---|
| Emanuela Schilirò | National Research Council (CNR - Italy) |
| Giuseppe Greco | National Research Council (CNR - Italy) |
| Patrick Fiorenza | National Research Council (CNR - Italy) |
| Cristina Tudisco | Università di Catania |
| Guglielmo Guido Condorelli | Università di Catania |
| Salvatore Di Franco | Università di Catania |
| Fabrizio Roccaforte | National Research Council (CNR - Italy) |
| Raffaella Lo Nigro | National Research Council (CNR - Italy) |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: Electron Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: -
Substrates
| Si(100) |
| AlGaN |
Notes
| 464 |