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Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
Type:
Journal
Info:
ECS Solid State Letters, 2 (12) P114-P116 (2013)
Date:
2013-09-24
Author Information
| Name | Institution |
|---|---|
| Jong-Sik Choi | Seoul National University |
| Bong Seob Yang | Seoul National University |
| Seok-Jun Won | Samsung Electronics Co. |
| Jun-Rae Kim | Seoul National University |
| Sungin Suh | Seoul National University |
| Hui Kyung Park | Chonnam National University |
| Jaeyeong Heo | Chonnam National University |
| Hyeong Joon Kim | Seoul National University |
Films
Plasma SiO2
Plasma SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
Notes
| 598 |