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Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Microelectronic Engineering 87 (2010) 1391 - 1395
Date:
2009-11-27
Author Information
| Name | Institution |
|---|---|
| Bum Ho Choi | Korea Institute of Industrial Technology |
| Yong Hwan Lim | Korea Institute of Industrial Technology |
| Jong Ho Lee | Korea Institute of Industrial Technology |
| Young Baek Kim | Korea Institute of Industrial Technology |
| Ho-Nyun Lee | Korea Institute of Industrial Technology |
| Hong Kee Lee | Korea Institute of Industrial Technology |
Films
Film/Plasma Properties
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Substrates
| Si(100) |
| TaN |
Notes
| 712 |