Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 7, JULY 2014
Date:
2014-05-08

Author Information

Name Institution
Ting-En HsiehNational Chiao Tung University

Films

Plasma AlN


Thermal Al2O3

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Threshold Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: -

Substrates

Notes

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