Publication Information

Title: Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 7, JULY 2014

Date: 2014-05-08

DOI: http://dx.doi.org/10.1109/LED.2014.2321003

Author Information

Name

Institution

National Chiao Tung University

Films

Plasma AlN using Unknown

Deposition Temperature = 250C

75-24-1

7664-41-7

Thermal Al2O3 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Threshold Voltage Shift

C-V, Capacitance-Voltage Measurements

Unknown

Transistor Characteristics

Unknown

Unknown

Substrates

Keywords

Gate Dielectric

HEMT, High Electron Mobility Transistor

Notes

253

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