Publication Information

Title: Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Type: Journal

Info: Microelectronic Engineering 147 (2015) 231 - 234

Date: 2015-04-18

DOI: http://dx.doi.org/10.1016/j.mee.2015.04.102

Author Information

Name

Institution

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7782-44-7

Plasma HfO2 using Unknown

Deposition Temperature Range N/A

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam VASE

Band Gap

Ellipsometry

J.A. Woollam VASE

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

InGaAs

Keywords

Notes

351

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com