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Nitride memristors
Type:
Journal
Info:
Applied Physics A 2012, Volume 109, Issue 1, pp 1--4
Date:
2012-07-03
Author Information
| Name | Institution |
|---|---|
| Byung Joon Choi | Hewlett-Packard |
| J. Joshua Yang | Hewlett-Packard |
| Min-Xian Max Zhang | Hewlett-Packard |
| Kate J. Norris | University of California - Santa Cruz |
| Douglas A. A. Ohlberg | Hewlett-Packard |
| Nobuhiko P. Kobayashi | University of California - Santa Cruz |
| Gilberto Medeiros-Ribeiro | Hewlett-Packard |
| R. Stanley Williams | Hewlett-Packard |
Films
Film/Plasma Properties
Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| SiO2 |
Notes
| 657 |