Growth of aluminum nitride films by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Inorganic Materials, 2015, Vol. 51, No. 7, pp. 728-735
Date:
2014-11-24

Author Information

Name Institution
V. A. TaralaNorth-Caucasus Federal University
A. S. AltakhovNorth-Caucasus Federal University
M. Yu. ShevchenkoNorth-Caucasus Federal University
D. P. ValyukhovNorth-Caucasus Federal University
S. V. LisitsynNorth-Caucasus Federal University
V. Ya. MartensNorth-Caucasus Federal University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Transmittance
Analysis: Optical Transmission

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Substrates

Si(111)

Notes

398