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Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01B103 (2016)
Date:
2015-11-16
Author Information
| Name | Institution |
|---|---|
| Ashish V. Jagtiani | IBM |
| Hiroyuki Miyazoe | IBM |
| Josephine Chang | IBM |
| Damon B. Farmer | IBM |
| Michael Engel | IBM |
| Deborah Neumayer | IBM |
| Shu-Jen Han | IBM |
| Sebastian U. Engelmann | IBM |
| David R. Boris | U.S. Naval Research Laboratory |
| Sandra C. Hernández | U.S. Naval Research Laboratory |
| Evgeniya H. Lock | U.S. Naval Research Laboratory |
| Scott G. Walton | U.S. Naval Research Laboratory |
| Eric A. Joseph | IBM |
Films
Other HfO2
Other HfO2
Other HfO2
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Graphene |
Notes
| Graphene was subjected to N2, O2, or SF6 plasma for functionalization prior to thermal HfO2 ALD growth. |
| 432 |