Sign up for news and updates!

Publication Information

Title: Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

Type: Journal

Info: Semiconductors, 2016, Vol. 50, No. 12, pp 1619--1621.

Date: 2016-05-10

DOI: http://dx.doi.org/10.1134/S1063782616120186

Author Information

Name

Institution

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Aalto University

Aalto University

Aalto University

Films

Plasma AlN using Beneq TFS-500

Deposition Temperature = 200C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

GaAs

Keywords

Passivation

Notes

1002

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2018 plasma-ald.com