The publication database currently has 1700 entries.
Use Advanced Search for more complex searches
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 100, 071606 (2012)
Date:
2012-02-01
Author Information
| Name | Institution |
|---|---|
| H. Jussila | Aalto University |
| Päivi Mattila | Aalto University |
| J. Oksanen | Aalto University |
| Alexander Pyymaki Perros | Aalto University |
| J. Riikonen | Aalto University |
| Markus Bosund | Aalto University |
| A. Varpula | Aalto University |
| Teppo Huhtio | Aalto University |
| Harri Lipsanen | Aalto University |
| M. Sopanen | Aalto University |
Films
Plasma AlN
Thermal HfO2
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| GaAs |
| AlN |
Notes
| Beneq TFS-500 plasma AlN and thermal HfO2 for GaAs passivation and MIS gate dielectric. |
| 175 |