Publication Information

Title: Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition

Type: Journal

Info: RSC Adv., 2015, 5, 57865-57874

Date: 2015-06-25

DOI: http://dx.doi.org/10.1039/C5RA07709E

Author Information

Name

Institution

University of Alberta

University of Alberta

Films

Deposition Temperature Range = 150-425C

1115-99-7

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000D

Optical Properties

Ellipsometry

J.A. Woollam M-2000D

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Bruker D8 Discover

Density

XRR, X-Ray Reflectivity

Bruker D8 Discover

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Dimension Edge

Resistivity, Sheet Resistance

Hall effect/van der Pauw method

Nanometrics HL5500

Mobility

Hall effect/van der Pauw method

Nanometrics HL5500

Substrates

Sapphire

Keywords

Notes

377

Disclaimer

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