Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy

Type:
Conference Proceedings
Info:
AWAD2014
Date:
2014-06-01

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Shigeru KubotaYamagata University
Bashir AhmmadYamagata University
Fumihiko HiroseYamagata University

Films

Plasma Ga2O3

Hardware used: Unknown


CAS#: 7782-44-7

CAS#: 7732-18-5

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy

Substrates

Notes

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