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Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
Type:
Journal
Info:
Applied Surface Science Volume 266, 1 February 2013, Pages 89-93
Date:
2013-02-01
Author Information
| Name | Institution |
|---|---|
| Li-Tien Huang | National Taiwan University |
| Ming-lun Chang | National Taiwan University |
| Jhih-Jie Huang | National Taiwan University |
| Hsin-Chih Lin | National Taiwan University |
| Chin-Lung Kuo | National Taiwan University |
| Min-Hung Lee | National Taiwan University |
| Chee Wee Liu | National Taiwan University |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma HfO2
Plasma HfON
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 352535-01-4
CAS#: 7782-44-7
CAS#: 7664-41-7
Film/Plasma Properties
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| Substrates cleaned and HF dipped. |
| 134 |