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Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
Type:
Journal
Info:
AIP ADVANCES 6, 065012 (2016)
Date:
2016-06-02
Author Information
| Name | Institution |
|---|---|
| J Provine | Stanford University |
| Peter Schindler | Stanford University |
| Yongmin Kim | Stanford University |
| Steve P. Walch | Stanford University |
| Hyo Jin Kim | Stanford University |
| Ki-Hyun Kim | Samsung Electronics Co. |
| Fritz B. Prinz | Stanford University |
Films
Plasma SiNx
Plasma SiNx
Plasma SiNx
Plasma SiNx
Plasma SiNx
Plasma SiNx
Plasma SiNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Etch Rate
Analysis: Wet Etch
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si(100) |
Notes
| 797 |