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Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
Type:
Journal
Info:
Solid-State Electronics 54 (2010) 1326 - 1331
Date:
2010-05-16
Author Information
| Name | Institution |
|---|---|
| Jaehyun Moon | Electronics and Telecommunication Research Institute, (ETRI) |
| Yong-Hae Kim | Electronics and Telecommunication Research Institute, (ETRI) |
| Dong-Jin Park | Electronics and Telecommunication Research Institute, (ETRI) |
| Choong-Heui Chung | Electronics and Telecommunication Research Institute, (ETRI) |
| Seung-Youl Kang | Electronics and Telecommunication Research Institute, (ETRI) |
| Jin Ho Lee | Electronics and Telecommunication Research Institute, (ETRI) |
Films
Film/Plasma Properties
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| SiO2 |
Notes
| 703 |