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Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
Type:
Journal
Info:
Solid-State Electronics 54 (2010) 323 - 326
Date:
2009-10-25
Author Information
| Name | Institution |
|---|---|
| Dong-Jin Park | Kyungpook National University |
| Jung Wook Lim | Electronics and Telecommunication Research Institute, (ETRI) |
| Byung Ok Park | Kyungpook National University |
Films
Plasma AlON
Film/Plasma Properties
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
Notes
| 716 |