Publication Information

Title: An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices

Type: Journal

Info: Mater. Res. Express 3 (2016) 035012

Date: 2016-02-23

DOI: http://dx.doi.org/10.1088/2053-1591/3/3/035012

Author Information

Name

Institution

Xiamen University

Xiamen University

Xiamen University

Xiamen University

Xiamen University

Xiamen University

Xiamen University

Xiamen University

Xiamen University

Films

Plasma HfO2 using Unknown

Deposition Temperature = 250C

352535-01-4

7782-44-7

7727-37-9

Plasma HfO2 using Unknown

Deposition Temperature = 250C

352535-01-4

7782-44-7

Thermal HfO2 using Unknown

Deposition Temperature = 250C

352535-01-4

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Thickness

XRR, X-Ray Reflectivity

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Substrates

Ge

Keywords

Notes

817

Disclaimer

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