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Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A129 (2016)
Date:
2015-11-11
Author Information
| Name | Institution |
|---|---|
| Mengdi Yang | University of Twente |
| Antonius A. I. Aarnink | University of Twente |
| Alexey Y. Kovalgin | University of Twente |
| Dirk. J. Gravesteijn | University of Twente |
| Rob A. M. Wolters | University of Twente |
| Jurriaan Schmitz | University of Twente |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EFTEM, Energy Filtered Transmission Electron Microscopy
Substrates
| W |
Notes
| Discusses using Te etching as a means to determine H-radical flux. |
| 411 |