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Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
Type:
Journal
Info:
ETRI Journal, Volume 38, Number 4, p. 675 - 684 (2016)
Date:
2016-04-05
Author Information
| Name | Institution |
|---|---|
| Ho-Kyun Ahn | Electronics and Telecommunication Research Institute, (ETRI) |
| Hae-Cheon Kim | Electronics and Telecommunication Research Institute, (ETRI) |
| Dong-Min Kang | Electronics and Telecommunication Research Institute, (ETRI) |
| Sung-Il Kim | Electronics and Telecommunication Research Institute, (ETRI) |
| Jong-Min Lee | Electronics and Telecommunication Research Institute, (ETRI) |
| Sang-Heung Lee | Electronics and Telecommunication Research Institute, (ETRI) |
| Byoung-Gue Min | Electronics and Telecommunication Research Institute, (ETRI) |
| Hyoung-Sup Yoon | Electronics and Telecommunication Research Institute, (ETRI) |
| Daong-Young Kim | Electronics and Telecommunication Research Institute, (ETRI) |
| Jong-Won Lim | Electronics and Telecommunication Research Institute, (ETRI) |
| Yong-Hwan Kwon | Electronics and Telecommunication Research Institute, (ETRI) |
| Eun-Soo Nam | Electronics and Telecommunication Research Institute, (ETRI) |
| Hyoung-Moo Park | Dongguk University |
| Jung-Hee Lee | Kyungpook National University |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Etch Rate
Analysis: Plasma Etching
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| AlGaN |
Notes
| Discussion of Al2O3 etch chemistries. |
| Study showned Al2O3 etch rate of about 5.5A/min for CF4 etching. |
| Cl-based etch is about 6nm/s. |
| 784 |