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Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
Type:
Journal
Info:
J. Vac. Sci. Technol. A 31(1), Jan/Feb 2013
Date:
2012-10-12
Author Information
| Name | Institution |
|---|---|
| İnci Dönmez | Bilkent University |
| Çağla Özgit | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Si(111) |
Notes
| RTA under N2 ambient. |
| 109 |