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Publication Information

Title: Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects

Type: Journal

Info: Journal of Alloys and Compounds, Volume 686, 2016, Pages 1025 - 1031

Date: 2016-06-27

DOI: http://dx.doi.org/10.1016/j.jallcom.2016.06.270

Author Information

Name

Institution

Yeungnam University

Korean Basic Science Institute

Yeungnam University

Films

Plasma Ru using Unknown

Deposition Temperature = 225C

0-0-0

7664-41-7

Plasma Mn using Unknown

Deposition Temperature = 225C

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Substrates

SiO2

Keywords

Interconnect

Diffusion Barrier

Seed Layer

Notes

919

Disclaimer

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