Publication Information

Title: Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

Type: Journal

Info: APPLIED PHYSICS LETTERS 97, 052904 (2010)

Date: 2010-08-06

DOI: http://dx.doi.org/10.1063/1.3473773

Author Information

Name

Institution

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Glebe Laboratories

Università  della Calabria

Tyndall National Institute, University College Cork

Films

Deposition Temperature Range N/A

75-24-1

7732-18-5

Deposition Temperature Range N/A

352535-01-4

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

99

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