Publication Information

Title: Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V

Type: Journal

Info: Applied Surface Science 303 (2014) 388 - 392

Date: 2014-03-02

DOI: http://dx.doi.org/10.1016/j.apsusc.2014.03.011

Author Information

Name

Institution

STMicroelectronics

STMicroelectronics

CEA - LETI MINATEC

LTM-CNRS, Laboratoire des technologies de la Microélectronique

LTM-CNRS, Laboratoire des technologies de la Microélectronique

CEA - LETI MINATEC

STMicroelectronics

LTM-CNRS, Laboratoire des technologies de la Microélectronique

Films

Plasma TaCN using ASM EmerALD

Deposition Temperature = 325C

169896-41-7

1333-74-0

Thermal HfO2 using Unknown

Deposition Temperature = 350C

13499-05-3

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Substrates

HfO2

Keywords

Notes

678

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