Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures

Type:
Journal
Info:
physica status solidi (a) Volume 209, Issue 2, pages 266--271, 2012
Date:
2011-11-03

Author Information

Name Institution
Mustafa AlevliBilkent University
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Necmi BiyikliBilkent University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Notes

697