The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition

Type:
Journal
Info:
Journal of Nanoscience and Nanotechnology, Volume 12, Number 7, 2012
Date:
2012-07-01

Author Information

Name Institution
Jaesang LeeHanyang University
Hyungchul KimHynix Semiconductor
Taeyong ParkHanyang University
Youngbin KoHanyang University
Heeyoung JeonHanyang University
Jingyu ParkHanyang University
Jaehun RyuHynix Semiconductor
Hyeongtag JeonHanyang University

Films


Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)
SiO2

Notes

670