Fixed Charge Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Fixed Charge returned 36 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of HfO2 thin films grown by plasma atomic layer deposition
2Improved understanding of recombination at the Si/Al2O3 interface
3Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
4On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
5Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
6Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
7Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
8Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
9Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
10Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
11Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
12Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
13Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
14Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
15Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
18Low-thermal budget flash light annealing for Al2O3 surface passivation
19Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
20Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
21Passivation effects of atomic-layer-deposited aluminum oxide
22Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
23Trapped charge densities in Al2O3-based silicon surface passivation layers
24Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
25Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
26Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
27Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
28Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
29Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
30Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
31AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
32Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
33Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
34Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
35Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
36Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode