1 | Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition |
2 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
3 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
4 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
5 | ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window" |
6 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
7 | Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure |
8 | Film Uniformity in Atomic Layer Deposition |
9 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
10 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
11 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
12 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
13 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
14 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
15 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
16 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
17 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
18 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
19 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
20 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
21 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
22 | Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications |
23 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
24 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
25 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
26 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
27 | Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition |
28 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
29 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
30 | Room-Temperature Atomic Layer Deposition of Platinum |
31 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
32 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
33 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
34 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
35 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
36 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
37 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
38 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
39 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
40 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
41 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
42 | Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper |
43 | Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties |
44 | Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling |
45 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
46 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
47 | Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition |
48 | Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers |
49 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
50 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
51 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
52 | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma |
53 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
54 | Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films |
55 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
56 | Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties |
57 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
58 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
59 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
60 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
61 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
62 | Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers |
63 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
64 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
65 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
66 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
67 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
68 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
69 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
70 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
71 | Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films |
72 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
73 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
74 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
75 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
76 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
77 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
78 | Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure |
79 | Plasma-enhanced atomic layer deposition of tungsten nitride |
80 | TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition |
81 | Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors |
82 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
83 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
84 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
85 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
86 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
87 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
88 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
89 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
90 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
91 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
92 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
93 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
94 | Nanowire single-photon detectors made of atomic layer-deposited niobium nitride |
95 | Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition |
96 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
97 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
98 | Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers |
99 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
100 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
101 | Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides |
102 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
103 | Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
104 | Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films |
105 | Plasma-enhanced atomic layer deposition of vanadium nitride |
106 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
107 | Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers |
108 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
109 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
110 | Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition |
111 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
112 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
113 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
114 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
115 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
116 | Plasma-enhanced atomic layer deposition of Co on metal surfaces |
117 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
118 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
119 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
120 | Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization |
121 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
122 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
123 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
124 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
125 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
126 | Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy |
127 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
128 | Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films |
129 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
130 | Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer |
131 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
132 | Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier |
133 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
134 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
135 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
136 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
137 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
138 | Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates |
139 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
140 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
141 | Evaluation of plasma parameters on PEALD deposited TaCN |
142 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
143 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
144 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
145 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
146 | WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications |
147 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
148 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
149 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
150 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
151 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
152 | High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications |
153 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
154 | Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices |
155 | Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD |
156 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
157 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
158 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
159 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
160 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
161 | Atmospheric pressure plasma enhanced spatial ALD of silver |
162 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
163 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
164 | Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition |
165 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage |
166 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
167 | Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films |
168 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
169 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
170 | A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition |
171 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
172 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
173 | Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt |
174 | Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate |
175 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
176 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
177 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
178 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
179 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
180 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
181 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
182 | Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications |
183 | Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition |
184 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
185 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
186 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
187 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
188 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
189 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
190 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
191 | Atomic layer deposition of titanium nitride for quantum circuits |
192 | Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition |
193 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
194 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
195 | Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer |
196 | Plasma-Modified Atomic Layer Deposition |
197 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
198 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
199 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
200 | Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing |
201 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
202 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
203 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
204 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
205 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
206 | Atomic layer deposition of titanium nitride from TDMAT precursor |
207 | Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature |
208 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
209 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
210 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
211 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
212 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
213 | Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor |
214 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
215 | Microwave properties of superconducting atomic-layer deposited TiN films |
216 | Plasma-Enhanced Atomic Layer Deposition of Ni |
217 | Atomic Layer Deposition of the Conductive Delafossite PtCoO2 |
218 | Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film |
219 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
220 | A route to low temperature growth of single crystal GaN on sapphire |
221 | PEALD of Copper using New Precursors for Next Generation of Interconnections |
222 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
223 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
224 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
225 | Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition |
226 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
227 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
228 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
229 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
230 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
231 | Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor |
232 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
233 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
234 | Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment |
235 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
236 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
237 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
238 | Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant |
239 | Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films |
240 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
241 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
242 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
243 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
244 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
245 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
246 | GeSbTe deposition for the PRAM application |
247 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
248 | Fully CMOS-compatible titanium nitride nanoantennas |
249 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
250 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
251 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
252 | Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization |
253 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
254 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
255 | Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications |
256 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
257 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
258 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
259 | Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition |
260 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
261 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
262 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
263 | Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor |