| 1 | From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications |
| 2 | Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition |
| 3 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 4 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 5 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
| 6 | Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma |
| 7 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments |
| 8 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 9 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
| 10 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 11 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
| 12 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
| 13 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 14 | High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness |
| 15 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 16 | Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition |
| 17 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
| 18 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
| 19 | Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries |
| 20 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 21 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
| 22 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
| 23 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 24 | IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer |
| 25 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 26 | Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells |
| 27 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
| 28 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 29 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
| 30 | Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition |
| 31 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
| 32 | Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films |
| 33 | Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes |
| 34 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
| 35 | Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma |
| 36 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
| 37 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
| 38 | Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy |
| 39 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 40 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
| 41 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 42 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
| 43 | Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition |
| 44 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 45 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
| 46 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
| 47 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
| 48 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
| 49 | Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy |
| 50 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 51 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
| 52 | Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition |
| 53 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
| 54 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
| 55 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 56 | Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8] |
| 57 | Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition |
| 58 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
| 59 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
| 60 | Plasma-enhanced atomic layer deposition of palladium on a polymer substrate |
| 61 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 62 | Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition |
| 63 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
| 64 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 65 | Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates |
| 66 | Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition |
| 67 | Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films |
| 68 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 69 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
| 70 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
| 71 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
| 72 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 73 | Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma |
| 74 | Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure |
| 75 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 76 | Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant |
| 77 | Evaluation of plasma parameters on PEALD deposited TaCN |
| 78 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition |
| 79 | Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma |
| 80 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 81 | Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition |
| 82 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
| 83 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 84 | Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering |
| 85 | Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control |
| 86 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 87 | Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition |
| 88 | Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes |
| 89 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
| 90 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 91 | Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions |
| 92 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 93 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
| 94 | Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition |
| 95 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
| 96 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 97 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
| 98 | Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy |
| 99 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
| 100 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 101 | Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co |
| 102 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 103 | Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S |
| 104 | Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition |
| 105 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 106 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
| 107 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
| 108 | Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations |
| 109 | Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition |
| 110 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
| 111 | New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell |
| 112 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
| 113 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
| 114 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
| 115 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 116 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
| 117 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 118 | Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
| 119 | Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates |
| 120 | Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 121 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 122 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 123 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
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