WF6, Tungsten Hexafluoride, CAS# 7783-82-6

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
2WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
3Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
4Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
5Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
6Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
7Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
8WS2 transistors on 300 mm wafers with BEOL compatibility
9Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
10Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
11Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
12Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
13Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
14Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
15A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect