TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
2EpiValence๐Ÿ‡ฌ๐Ÿ‡งHafnium dimethylamide
3Gelest๐Ÿ‡บ๐Ÿ‡ธHafnium Dimethylamide
4Ereztech๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino) hafnium(IV)
5Sigma-Aldrich, Co. LLC๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamido)hafnium(IV) รขโ€ฐยฅ99.99%
6Apollo Scientific๐Ÿ‡ฌ๐Ÿ‡งTetrakis(dimethylamino)hafnium(IV) 99.999%
7DOCK/CHEMICALS๐Ÿ‡ฉ๐Ÿ‡ชTetrakis(dimethylamido)hafnium
8Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
9American Elements๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamido)hafnium(IV)
10Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 70 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Uniform Growth of Sub-5-Nanometer High-ฮบ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
2Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
3Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
4A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
5TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
6AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
7Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
8Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
9Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
10The effects of layering in ferroelectric Si-doped HfO2 thin films
11Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
12Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
13HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
14Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
15Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
16In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
17Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
18Annealing behavior of ferroelectric Si-doped HfO2 thin films
19Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
20Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
21Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
22Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
23Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
24Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
25HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
26Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
27Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
28Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
29Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
30A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
31Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
32Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
33Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
34Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
35Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
36Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
37Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
38Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
39Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
40Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ ฮฒ-Ga2O3
41A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
42Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
43Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
44Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
45On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
46The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
47Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
48Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
49Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
50The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
51High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
52Enhanced electrical and reliability characteristics in HfON gated Geย p-MOSFETs with H2 and NH3 plasma treated interfacial layers
53Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
54Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
55Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
56Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
57Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
58Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
59Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
60Damage evaluation in graphene underlying atomic layer deposition dielectrics
61Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
62Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
63Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
64Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
65Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
66Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
67Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
68Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
69HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
70Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET