AlCl3, Aluminum Trichloride, CAS# 7446-70-0

Informational Websites

NumberWebsite
1http://webbook.nist.gov/cgi/cbook.cgi?ID=7446-70-0

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALSπŸ‡©πŸ‡ͺAluminumtrichloride
2Pegasus ChemicalsπŸ‡¬πŸ‡§Aluminium chloride
3TCIπŸ‡ΊπŸ‡ΈAluminum(III) Chloride
4Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈAluminum chloride, anhydrous (99.99+%-Al) PURATREM
5Sigma-Aldrich, Co. LLCπŸ‡ΊπŸ‡ΈAluminum chloride anhydrous, powder, 99.999% trace metals basis
6EreztechπŸ‡ΊπŸ‡ΈAluminum chloride
7Alfa AesarπŸ‡ΊπŸ‡ΈAluminum chloride, anhydrous, 99.999% (metals basis)
8Santa Cruz BiotechnologyπŸ‡ΊπŸ‡ΈAluminum chloride anhydrous

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 9 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
2Formation of aluminum nitride thin films as gate dielectrics on Si(100)
3Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
4Radical Enhanced Atomic Layer Deposition of Metals and Oxides
5Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
6Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
7Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
8Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
9Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition