TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide, CAS# 19824-55-6

Where to buy

NumberVendorRegionLink
1Sigma-Aldrich, Co. LLC🇺🇸Tetrakis(diethylamido)hafnium(IV) 99.99%
2Gelest🇺🇸Hafnium Diethylamide
3Pegasus Chemicals🇬🇧Tetrakis(diethylamido)hafnium(IV)
4Alfa Aesar🇺🇸Tetrakis(diethylamino)hafnium(IV), 99%
5Strem Chemicals, Inc.🇺🇸Tetrakis(diethylamino)hafnium, 99% (99.99+%-Hf, <0.2% Zr) PURATREM
6Ereztech🇺🇸Tetrakis(diethylamino) hafnium
7Santa Cruz Biotechnology🇺🇸Tetrakis(diethylamino)hafnium
8Apollo Scientific🇬🇧Tetrakis(diethylamino)hafnium 99.999%
9American Elements🇺🇸Tetrakis(diethylamido)hafnium(IV)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 22 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
2Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
3Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
4Characteristics of HfO2 thin films grown by plasma atomic layer deposition
5The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
6Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
7Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
8Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
9Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
10Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
11Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
12Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
13Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
14Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
15Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
16Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
17Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
18Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
19Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
20Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
21Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
22Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition