TEMAH, Tetrakis[(EthylMethyl)Amido]Hafnium, [(EtMe)N]4Hf, CAS# 352535-01-4

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Tetrakis(ethylmethylamino)hafnium, 99% (99.99+%-Hf, <0.15% Zr)
2Strem Chemicals, Inc.Tetrakis(ethylmethylamino)hafnium, 99% (99.99+%-Hf, <0.15% Zr), contained in 50 ml cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 56 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1HfAlOxProperties of HfAlO film deposited by plasma enhanced atomic layer deposition
2HfLaOxBand alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
3HfLaOxCharacteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
4HfLaOxComparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
5HfLaOxFerroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
6HfLaOxLow temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
7HfLaOxProperties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
8HfNxA comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
9HfO2An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
10HfO2Breakdown and Protection of ALD Moisture Barrier Thin Films
11HfO2Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
12HfO2Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
13HfO2Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
14HfO2Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
15HfO2Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
16HfO2Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
17HfO2Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
18HfO2Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
19HfO2Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
20HfO2Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
21HfO2Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
22HfO2Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
23HfO2Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
24HfO2Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
25HfO2Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
26HfO2Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
27HfO2Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
28HfO2Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
29HfO2Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
30HfO2Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
31HfO2Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
32HfO2Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
33HfO2On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
34HfO2Optical properties and bandgap evolution of ALD HfSiOx films
35HfO2Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
36HfO2Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
37HfO2Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
38HfO2Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
39HfO2Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
40HfO2Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
41HfO2Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
42HfO2Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
43HfO2Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
44HfO2Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
45HfO2Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
46HfO2Symmetrical Al2O3-based passivation layers for p- and n-type silicon
47HfO2The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
48HfO2The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
49HfO2The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
50HfO2The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
51HfO2Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
52HfO2Trapped charge densities in Al2O3-based silicon surface passivation layers
53HfONImprovement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
54HfSiOxOptical properties and bandgap evolution of ALD HfSiOx films
55HfZrO2Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
56HfZrSiOSub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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