| 1 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 2 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 3 | Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects |
| 4 | Atomic layer deposition of GaN at low temperatures |
| 5 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 6 | Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design |
| 7 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
| 8 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 9 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
| 10 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
| 11 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 12 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
| 13 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 14 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 15 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
| 16 | Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects |
| 17 | Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition |
| 18 | Texture of atomic layer deposited ruthenium |
| 19 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 20 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
| 21 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 22 | Texture of atomic layer deposited ruthenium |
| 23 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 24 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 25 | Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers |
| 26 | Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor |
| 27 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
| 28 | Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer |
| 29 | Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces |
| 30 | Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions |
| 31 | Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia |
| 32 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 33 | Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition |
| 34 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 35 | Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect |
| 36 | Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant |
| 37 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 38 | A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment |
| 39 | The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology |
| 40 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
| 41 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 42 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 43 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 44 | Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate |
| 45 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
| 46 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 47 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 48 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 49 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 50 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
| 51 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 52 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
| 53 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
| 54 | The Properties of Cu Thin Films on Ru Depending on the ALD Temperature |
| 55 | Formation of aluminum nitride thin films as gate dielectrics on Si(100) |
| 56 | Atomic layer controlled deposition of silicon nitride with self-limiting mechanism |
| 57 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 58 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 59 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
| 60 | Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition |
| 61 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 62 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
| 63 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 64 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 65 | Self-Limiting Growth of GaN at Low Temperatures |
| 66 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
| 67 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 68 | In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition |
| 69 | Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate |
| 70 | Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma |
| 71 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
| 72 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
| 73 | Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor |
| 74 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 75 | Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy |
| 76 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 77 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 78 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
| 79 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 80 | Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition |
| 81 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 82 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 83 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
| 84 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 85 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 86 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 87 | Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
| 88 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
| 89 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 90 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 91 | Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
| 92 | Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric |
| 93 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 94 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 95 | Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing |
| 96 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition |
| 97 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 98 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
| 99 | Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy |
| 100 | Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization |
| 101 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 102 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 103 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 104 | Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition |
| 105 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 106 | Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition |
| 107 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 108 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
| 109 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
| 110 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 111 | Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition |
| 112 | Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride |
| 113 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
| 114 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 115 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 116 | NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors |
| 117 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
| 118 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 119 | Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia |
| 120 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
| 121 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 122 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 123 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 124 | Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier |
| 125 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 126 | Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition |
| 127 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 128 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 129 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
| 130 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
| 131 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 132 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 133 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 134 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
| 135 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
| 136 | Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers |
| 137 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 138 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
| 139 | Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt |
| 140 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
| 141 | Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects |
| 142 | Formation of Ni silicide from atomic layer deposited Ni |
| 143 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 144 | Evaluation of Stress Induced by Plasma Assisted ALD SiN Film |
| 145 | Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
| 146 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
| 147 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 148 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
| 149 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 150 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 151 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
| 152 | Plasma-enhanced ALD system for SRF cavity |
| 153 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| 154 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 155 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 156 | Nitride passivation of the interface between high-k dielectrics and SiGe |
| 157 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 158 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
| 159 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 160 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
| 161 | Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment |
| 162 | Challenges in spacer process development for leading-edge high-k metal gate technology |
| 163 | Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si |
| 164 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 165 | Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction |
| 166 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
| 167 | Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films |
| 168 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 169 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 170 | WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications |
| 171 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 172 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 173 | Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition |
| 174 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 175 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 176 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer |
| 177 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
| 178 | Layer-by-layer epitaxial growth of GaN at low temperatures |
| 179 | Crystalline growth of AlN thin films by atomic layer deposition |
| 180 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 181 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs |
| 182 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
| 183 | Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition |
| 184 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 185 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
| 186 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 187 | Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application |
| 188 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
| 189 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 190 | Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory |
| 191 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
| 192 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 193 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 194 | Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant |
| 195 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 196 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
| 197 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 198 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 199 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 200 | Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 201 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
| 202 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 203 | Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 204 | Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications |
| 205 | Atomic Layer Deposition of SiN for spacer applications in high-end logic devices |
| 206 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
| 207 | Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride |
| 208 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 209 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 210 | Analysis of nitrogen species in titanium oxynitride ALD films |
| 211 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 212 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 213 | Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition |
| 214 | Plasma-Enhanced Atomic Layer Deposition of Ni |
| 215 | A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect |
| 216 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 217 | Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets |
| 218 | The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films |
| 219 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
| 220 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 221 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 222 | Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition |
| 223 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 224 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
| 225 | PEALD AlN: controlling growth and film crystallinity |
| 226 | Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3 |
| 227 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 228 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
| 229 | Silicon surface passivation with atomic layer deposited aluminum nitride |
| 230 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
| 231 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 232 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
| 233 | Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition |
| 234 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 235 | Atomic layer deposition of InN using trimethylindium and ammonia plasma |
| 236 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
| 237 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
| 238 | Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications |
| 239 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
| 240 | 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric |
| 241 | Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma |
| 242 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
| 243 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 244 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 245 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 246 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
| 247 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
| 248 | Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization |
| 249 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 250 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 251 | Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes |
| 252 | Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3 |
| 253 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 254 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 255 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
| 256 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
| 257 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 258 | Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source |
| 259 | Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition |
| 260 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 261 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
| 262 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
