Ammonia, NH3, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 159 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1Al2O3AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2Al2O3Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3Al2O3Nitride passivation of the interface between high-k dielectrics and SiGe
4AlxGa1-xNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
5AlxGa1-xNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
6AlNA comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7AlNA rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
8AlNAtomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
9AlNComparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
10AlNComparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
11AlNConformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
12AlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
13AlNCrystalline growth of AlN thin films by atomic layer deposition
14AlNCurrent transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
15AlNEffect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
16AlNElectrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
17AlNGaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
18AlNGate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
19AlNHigh-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
20AlNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
21AlNImpact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
22AlNImproved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
23AlNInfluence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
24AlNInitial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
25AlNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
26AlNLow-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
27AlNOptical properties of AlN thin films grown by plasma enhanced atomic layer deposition
28AlNPassivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
29AlNPEALD AlN: controlling growth and film crystallinity
30AlNPlasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
31AlNPlasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
32AlNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
33AlNProperties of AlN grown by plasma enhanced atomic layer deposition
34AlNSelf-limiting growth of GaN using plasma-enhanced atomic layer deposition
35AlNSelf-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
36AlNSilicon surface passivation with atomic layer deposited aluminum nitride
37AlNStructural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
38AlNSuppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
39AlNTemplate-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
40AlNThe Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
41AlNThe influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
42AlNThin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
43AlNTiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
44AlONImprovement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
45AlONInterface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
46AlONPlasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
47BNLarge-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
48CoDegradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
49CoGrowth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
50CoHot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
51CoPlasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
52Cu3NCarbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
53GaNAtomic layer deposition of GaN at low temperatures
54GaNElectron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
55GaNElectronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
56GaNGrowth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
57GaNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
58GaNInfrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
59GaNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
60GaNLow-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
61GaNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
62GaNSelf-Limiting Growth of GaN at Low Temperatures
63GaNSelf-limiting growth of GaN using plasma-enhanced atomic layer deposition
64GaNTemperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
65GaNUltralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
66GaNUniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
67HfNxA comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
68HfO2Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
69HfONCharacterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
70HfONEnhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
71HfONImprovement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
72InNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
73MnOxDeposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
74MnOxManganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
75NiCharacteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
76NiFormation of Ni silicide from atomic layer deposited Ni
77NiImprovement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
78NiPlasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
79NiPlasma-Enhanced Atomic Layer Deposition of Ni
80PtPlasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
81RuAtomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
82RuAtomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
83RuCorrelation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
84RuDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
85RuEffects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
86RuImprovement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
87RuIntegration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
88RuPEALD of a Ruthenium Adhesion Layer for Copper Interconnects
89RuPotassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
90RuPreparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
91RuRu thin film grown on TaN by plasma enhanced atomic layer deposition
92RuScalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
93RuThe Properties of Cu Thin Films on Ru Depending on the ALD Temperature
94RuThe properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
95RuThermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
96Ru-WCNDevelopment of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
97RuCoEmerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
98RuSiNPlasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
99RuTaNAtomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
100RuTaNMicrostructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
101RuTaNNucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
102SiNxAtomic layer controlled deposition of silicon nitride with self-limiting mechanism
103SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
104SiNxChallenges in atomic layer deposition of carbon-containing silicon-based dielectrics
105SiNxCorrelation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
106SiNxDielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
107SiNxLow-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
108SiNxLow-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
109SiNxReactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
110SiNxRole of Surface Termination in Atomic Layer Deposition of Silicon Nitride
111SiNxTemperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
112SiNxThe effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
113SiO2Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
114TaCNThe Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
115TaNxGrowth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
116TaNxIntegration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
117TaNxPlasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
118TaNxRu thin film grown on TaN by plasma enhanced atomic layer deposition
119TaNxThermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
120TaNxTrilayer Tunnel Selectors for Memristor Memory Cells
121TiAlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
122TiAlNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
123TiCNPlasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
124TiCNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
125TiNAtomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
126TiNAtomic layer deposition of titanium nitride from TDMAT precursor
127TiNCharacteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
128TiNControllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
129TiNExcellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
130TiNFerroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
131TiNHighly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
132TiNHot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
133TiNNiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
134TiNPhotoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
135TiNPlasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
136TiNPotassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
137TiNReliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
138TiNThermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
139TiNTi-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
140TiNTiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
141TiNTunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
142TiONAnalysis of nitrogen species in titanium oxynitride ALD films
143TiONAnalysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
144TiONPlasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
145VNLow temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
146WCCharacteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
147WCNCharacteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
148WCNPulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
149WCNWork function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
150WNA New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
151WNEffects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
152WNInvestigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
153WNMethod to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
154WNPlasma-enhanced atomic layer deposition of tungsten nitride
155WNPulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
156ZnONLocal Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
157ZnONUltraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
158ZrONEnhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
159ZrONImpact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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