Nitrogen, N2, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 201 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1AgAtmospheric pressure plasma enhanced spatial ALD of silver
2Al2O3AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3Al2O3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Al2O3Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Al2O3Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Al2O3Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7AlxGa1-xNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
8AlxGa1-xNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
9AlxGa1-xNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
10AlxGa1-xNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
11AlInNAtomic layer epitaxy for quantum well nitride-based devices
12AlInNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
13AlInNPerspectives on future directions in III-N semiconductor research
14AlNALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
15AlNAlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
16AlNAtomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
17AlNAtomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
18AlNAtomic layer epitaxy for quantum well nitride-based devices
19AlNBipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
20AlNCompatibility of AlN/SiNx Passivation Technique with High-Temperature Process
21AlNCompatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
22AlNCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
23AlNEngineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
24AlNEpitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
25AlNFabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
26AlNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
27AlNGaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
28AlNGrowing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
29AlNGrowing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
30AlNGrowth of aluminum nitride films by plasma-enhanced atomic layer deposition
31AlNHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
32AlNHigh performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
33AlNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
34AlNImpact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
35AlNImproved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
36AlNInfluence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
37AlNInitial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
38AlNInvestigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
39AlNLow-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
40AlNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
41AlNLow-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
42AlNNew materials for memristive switching
43AlNNitride memristors
44AlNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
45AlNPerspectives on future directions in III-N semiconductor research
46AlNPlasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
47AlNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
48AlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
49AlNPolarization charge properties of low-temperature atomic layer deposition of AlN on GaN
50AlNPractical Challenges of Processing III-Nitride/Graphene/SiC Devices
51AlNRadical Enhanced Atomic Layer Deposition of Metals and Oxides
52AlNSelective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
53AlNStructural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
54AlNStructural and optical characterization of low-temperature ALD crystalline AlN
55AlNThe influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
56AlNTris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
57AlNXPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
58AlONImproved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
59AlONImproved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
60AlONOxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
61AlONStabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
62AlONThin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
63AlSixOyCharacteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
64BGaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
65BInNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
66BNFabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
67BNLarge-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
68BNLow-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
69BNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
70CoHot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
71Did Not WorkDeposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
72FeConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
73GaNA route to low temperature growth of single crystal GaN on sapphire
74GaNComparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
75GaNDemonstration of flexible thin film transistors with GaN channels
76GaNEffect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
77GaNElectronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
78GaNFabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
79GaNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
80GaNHollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
81GaNInvestigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
82GaNLow temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
83GaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
84GaNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
85GaNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
86GaNMetal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
87GaNOptical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
88GaNPerspectives on future directions in III-N semiconductor research
89GaNPlasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
90GaNStructure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
91GaNSubstrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
92GaNSubstrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
93GdNGadolinium nitride films deposited using a PEALD based process
94HfNxCharacteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
95HfNxPlasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
96HfO2An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
97HfO2Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
98HfO2Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
99HfONCharacterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
100InGaNGrowth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
101InGaNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
102InNAtomic layer epitaxy for quantum well nitride-based devices
103InNEpitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
104InNLow-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
105InNLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
106InNLow-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
107InNLow-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
108InNPerspectives on future directions in III-N semiconductor research
109LiPONAtomic Layer Deposition of the Solid Electrolyte LiPON
110LiPONSolid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
111MoCNPlasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
112NbNAtomic Layer Deposition of Niobium Nitride from Different Precursors
113NbNPlasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
114NbNPlasma-enhanced atomic layer deposition of superconducting niobium nitride
115NiConformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
116PdPlasma-enhanced atomic layer deposition of palladium on a polymer substrate
117RuPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
118RuScalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
119RuNxIn Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
120RuTiNImproved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
121RuTiNPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
122SiAlNPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
123SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
124SiNxAtomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
125SiNxAtomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
126SiNxCorrelation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
127SiNxCorrelation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
128SiNxLow-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
129SiNxPlasma enhanced atomic layer deposition of silicon nitride using neopentasilane
130SiNxPlasma enhanced atomic layer deposition of SiNx:H and SiO2
131SiNxPlasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
132SiNxPlasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
133SiNxReactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
134SiNxRedeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
135SiNxRole of Surface Termination in Atomic Layer Deposition of Silicon Nitride
136SiNxSilicon Nitride and Silicon Oxide Thin Films by Plasma ALD
137SiNxSingle-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
138SiNxSteady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
139SiNxThermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
140SiO2Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
141SiONPlasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
142TaNxEffect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
143TaNxOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
144TaNxReaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
145TaNxTrilayer Tunnel Selectors for Memristor Memory Cells
146TiAlNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
147TiAlNElectrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
148TiNALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
149TiNALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
150TiNAnnealing behavior of ferroelectric Si-doped HfO2 thin films
151TiNApproximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
152TiNAtomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
153TiNAtomic layer deposition of TiN for the fabrication of nanomechanical resonators
154TiNAtomic layer deposition of titanium nitride from TDMAT precursor
155TiNCharacteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
156TiNComparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
157TiNConformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
158TiNControlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
159TiNDeposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
160TiNElectrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
161TiNFabrication and deformation of three-dimensional hollow ceramic nanostructures
162TiNFully CMOS-compatible titanium nitride nanoantennas
163TiNHigh aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
164TiNInvestigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
165TiNLow sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
166TiNMicrowave properties of superconducting atomic-layer deposited TiN films
167TiNNew materials for memristive switching
168TiNNitride memristors
169TiNOptical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
170TiNPlasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
171TiNPlasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
172TiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
173TiNPlasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
174TiNPlasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
175TiNRadical Enhanced Atomic Layer Deposition of Metals and Oxides
176TiNReliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
177TiNRemote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
178TiNSilicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
179TiNSilicon nanowire networks for multi-stage thermoelectric modules
180TiNStrongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
181TiNSub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
182TiO2In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
183TiONAnalysis of nitrogen species in titanium oxynitride ALD films
184TiONAnalysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
185TiONNitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
186TiONPlasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
187TiONTitanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
188TiSiNPlasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
189WCA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
190WCAtomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
191WCCharacteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
192WCNPulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
193WNA controlled growth of WNx and WCx thin films prepared by atomic layer deposition
194WNPlasma-enhanced atomic layer deposition of tungsten nitride
195ZrNAxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
196ZrNBarrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
197ZrNInfluence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
198ZrNLow temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
199ZrNProbing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
200ZrNTuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
201ZrONImproved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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