Trisilylamine [N(SiH3)3], CAS# 13862-16-3

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 4 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1SiNxCorrelation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
2SiNxPlasma enhanced atomic layer deposition of silicon nitride using neopentasilane
3SiNxTemperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
4SiNxThe effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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