O3, Ozone, CAS# 10028-15-6

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
2Designing high performance precursors for atomic layer deposition of silicon oxide
3Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
4Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
5Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
6Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
7Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
8Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
9Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
10Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
11The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
12In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
13Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
14Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
15Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
16Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
17Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
18Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
19Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
20Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
21Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
22Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
23Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
24Comparative study of ALD SiO2 thin films for optical applications
25The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
26Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
27Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
28Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
29Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
30Low temperature temporal and spatial atomic layer deposition of TiO2 films
31Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
32Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
33Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
34Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
35Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
36Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
37Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
38High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
39A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
40Plasma enhanced atomic layer deposition of Ga2O3 thin films
41Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
42Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
43Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
44Breakdown and Protection of ALD Moisture Barrier Thin Films
45Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
46Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
47Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
48Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
49Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
50Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
51Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
52Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode