Your search for plasma enhanced atomic layer deposition publications discussing HfON films returned 5 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
|1||Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas|
|2||Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer|
|3||Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers|
|4||HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer|
|5||Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma|
I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: firstname.lastname@example.org
© 2014-2017 plasma-ald.com