SiNx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing SiNx films returned 39 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

1AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
2Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
3Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
4Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
5Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
6Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
7Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
8CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
9Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
10Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
11Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
12Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
13Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
14Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
15Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
16Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
17Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
18Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
19Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
20Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
21Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
22Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
23Plasma enhanced atomic layer deposition of SiNx:H and SiO2
24Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
25Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
26Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
27Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
28Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
29Reliability and parasitic issues in GaN-based power HEMTs: a review
30Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
31Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
32SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
33Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
34Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
35Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
36The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
37Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
38Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
39Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate


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