Hyungjun Kim Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Hyungjun Kim returned 53 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
2The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
3Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
4Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition
5Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
6Improvement of Gas-Sensing Performance of Large-Area Tungsten Disulfide Nanosheets by Surface Functionalization
7Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
8Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications
9Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
10Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
11Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
12Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery
13Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
14High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
15Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
16Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
17Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
18Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
19Plasma-Enhanced Atomic Layer Deposition of Ni
20Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
21Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
22Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
23Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
24Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film
25Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
26Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
27Very high frequency plasma reactant for atomic layer deposition
28Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
29Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
30Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
31Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
32Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
33In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
34Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
35Formation of Ni silicide from atomic layer deposited Ni
36Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
37Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
38Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
39Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
40Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
41Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
42Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
43HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
44Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
45Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
46Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
47Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
48Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
49The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
50The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
51Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
52The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
53Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor