Publication Information

Title: Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

Type: Journal

Info: Nanotechnology 26 (2015) 014002 (7pp)

Date: 2014-09-29

DOI: http://dx.doi.org/10.1088/0957-4484/26/1/014002

Author Information

Name

Institution

National Taiwan University

Taiwan Textile Research Institute

National Taiwan University of Science and Technology

National Taiwan University

Films

Plasma GaN using Custom ICP

Deposition Temperature Range = 200-500C

1115-99-7

7664-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Ellipso Technology Elli-SE

Thickness

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku TTRAX III

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

NT-MDT Solver P47SPM

Substrates

Si(100)

Keywords

PEALD Film Development

Notes

Ultratech Fiji PEALD GaN film development.

199

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