Publication Information

Title: Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer

Type: Journal

Info: 2014 International Conference on Solid State Devices and Materials

Date: 2014-09-08

DOI: https://doi.org/10.7567/SSDM.2014.E-1-2

Author Information

Name

Institution

IMEC

IMEC

IMEC

ASM Microchemistry Oy

IMEC

IMEC

IMEC

IMEC

Films

Plasma SiNx using ASM Eagle XP8

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Transistor Characteristics

Transistor Characterization

Auriga AU4850

Substrates

AlGaN

Keywords

Notes

1009

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